Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.Application· VHF and UHF applications with 12 V supply voltage, such as television tuners and professional commun...
BF908R: Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.Application· ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
VDS | drain-source voltage |
- |
- |
12 |
V | |
ID | drain current |
- |
- |
400 |
mA | |
Ptot | total power dissipation |
- |
- |
200 |
mW | |
Tj | operating junction temperature |
- |
- |
150 |
°C | |
yfs | forward transfer admittance |
36 |
43 |
50 |
mS | |
Cig1-s | input capacitance at gate 1 |
2.4 |
3.1 |
4 |
pF | |
Crs | reverse transfer capacitance |
f = 1 MHz |
20 |
30 |
45 |
pF |
F | noise figure |
f = 800 MHz |
- |
1.5 |
2.5 |
dB |
Depletion type field-effect transistor BF908R in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.