BFG520/XR Selling Leads, Price trend, BFG520/XR DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.SpecificationsIn accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage ...

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BFG520/XR: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.SpecificationsIn accordance with the Absolute Maximum System (IEC 134). ...

BFG520/XR Data Sheet

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Part Number:: BFG520/XR
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Product Details

Description

Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.

Specifications

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	v
V_CEO	collector-emitter voltage	open base	-	15	v
V_EBO	emitter-base voltage	open collector	-	2.5	v
I_C	DC collector current		-	70	mA
P_tot	total power dissipation	up to T_s = 88 °C; note 1	-	300	mW
T_stg	storage temperature		-65	150	°C
T_j	junction temperature		-	175	°C

Description

NPN silicon planar epitaxial transistors BFG520/XR, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

The transistors BFG520/XR are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.

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BFG520/XR

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