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BFG520/XR

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.SpecificationsIn accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage ...

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BFG520/XR: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.SpecificationsIn accordance with the Absolute Maximum System (IEC 134). ...

BFG520/XR Data Sheet

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Part Number:
BFG520/XR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Specifications

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
v
VCEO collector-emitter voltage
open base
-
15
v
VEBO emitter-base voltage
open collector
-
2.5
v
IC DC collector current
-
70
mA
Ptot total power dissipation
up to Ts = 88 °C; note 1
-
300
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C




Description

NPN silicon planar epitaxial transistors BFG520/XR, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

The transistors BFG520/XR are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes.




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