Position: Home  > All Categories> Integrated Circuits (ICs) > BFG520W

BFG520W

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detector...

product image

BFG520W Picture
See larger image
SeekIC No. : 004299669 Detail

BFG520W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as ana...

BFG520W Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFG520W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Application

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO collector-base voltage open emitter
-
-
20
V
VCES collector-emitter voltage RBE = 0
-
-
15
V
IC DC collector current  
-
-
70
mA
Ptot total power dissipation Ts 85 °C
-
-
500
mW
hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 °C
100
120
250
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz
-
0.35
-
pF
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
-
9
-
GHz
GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
-
17
-
dB
|s21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
16
17
-
dB
F noise figure Gs = Gopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
-
1.1
1.6
dB



Description

NPN silicon planar epitaxial transistor BFG520W in a 4-pin dual-emitter SOT343N plastic package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Filters
PICO2205A
PICO2204A
Transformers
TM-09210
BV222-1-00992
Test Equipment
TOP853
TOP2005
View more