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BF904AWR

Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.Application· VHF and UHF applications with 3 to 7 V sup...

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SeekIC No. : 004299577 Detail

BF904AWR: Features: · Specially designed for use at 5 V supply voltage· Short channel transistor with high transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Supe...

BF904AWR Data Sheet

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Part Number:
BF904AWR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Description



Features:

· Specially designed for use at 5 V supply voltage
· Short channel transistor with high transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.


Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage
-
-
7
V
ID drain current
-
-
30
mA
Ptot total power dissipation
-
-
200
mW
|yfs| forward transfer admittance
22
25
30
mS
Cig1-s input capacitance at gate 1
-
2.2
2.6
pF
Crs reverse transfer capacitance
f = 1 MHz
-
25
35
pF
F noise figure
f = 800 MHz
-
2
-
dB
Tj operating junction temperature   - - 150 °C



Description

Enhancement type field-effect transistors. The transistors BF904AWR consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.




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