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BFG25AW/X

Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.ApplicationWideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. M...

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BFG25AW/X: Features: · Low current consumption (100 mA to 1 mA)· Low noise figure· Gold metallization ensures excellent reliability.ApplicationWideband applications in UHF low power amplifiers, such as pocket ...

BFG25AW/X Data Sheet

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Part Number:
BFG25AW/X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Low current consumption (100 mA to 1 mA)
· Low noise figure
· Gold metallization ensures excellent reliability.


Application

Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
8
V
VCEO collector-emitter voltage
open base
-
5
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
6.5
mA
Ptot total power dissipation
Ts 85 °C; see Fig.2; note 1
-
500
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN silicon planar epitaxial transistor BFG25AW/X in a 4-pin dual-emitter SOT343N plastic package.




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