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BFG11WX

Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Application· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.· Dri...

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SeekIC No. : 004299635 Detail

BFG11WX: Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operating area· Gold metallization ensures excellent reliability· Linear and non-linear operation.Applicati...

BFG11WX Data Sheet

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Part Number:
BFG11WX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.


Application

· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
· Driver for DCS 1800.


Pinout

Connection Diagram


Description

NPN silicon planar epitaxial transistor BFG11WX encapsulated in a plastic 4-pin dual-emitter SOT343 package.


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