BFG505W

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar tectors, pager...

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SeekIC No. : 004299663 Detail

BFG505W: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end applications in the GHz range, such as analog and ...

floor Price/Ceiling Price

Part Number:
BFG505W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.



Application

RF front end applications in the GHz range,
   such as analog and digital cellular telephones,
   cordless telephones (CT2, CT3, PCN, DECT, etc.),
   radar   tectors, pagers, satellite television tuners (SATV).



Pinout

  Connection Diagram  Connection Diagram  Connection Diagram


Description

NPN silicon planar epitaxial transistors BFG505W in 4-pin dual-emitter SOT343N and SOT343R plastic packages.


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