BFG10W Selling Leads, Price trend, BFG10W DataSheet download, circuit diagram from SeekIC.com

Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITION...

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SeekIC No. : 004299630 Detail

BFG10W: Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation...

BFG10W Data Sheet

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Part Number:: BFG10W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Recent History
What is this?

BFG10 evaluate
Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operati...
BFG10,215 evaluate
US $.27 - .29 / Piece

Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25
BFG10/X evaluate
Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operati...

Product Details

Description

Features:

· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.

Application

· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	10	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	250	mA
I_C(AV)	average collector current		-	250	mA
P_tot	total power dissipation	up to T_s = 102 °C; note 1	-	400	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Description

NPN silicon planar epitaxial transistor BFG10W encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

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BFG10W

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