BFG10W Selling Leads, Price trend, BFG10W DataSheet download, circuit diagram from SeekIC.com

Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITION...

See larger image

SeekIC No. : 004299630 Detail

BFG10W: Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation...

BFG10W Data Sheet

Get Latest Price

Part Number:: BFG10W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

BFG10 evaluate
Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operati...
BFG10,215 evaluate
US $.27 - .29 / Piece

Transistors RF Bipolar Small Signal Single NPN 8V 250mA 400mW 25
BFG10/X evaluate
Features: · High power gain· High efficiency· Small size discrete power amplifier· 1.9 GHz operati...

Product Details

Description

Features:

· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.

Application

· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	10	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	250	mA
I_C(AV)	average collector current		-	250	mA
P_tot	total power dissipation	up to T_s = 102 °C; note 1	-	400	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Description

NPN silicon planar epitaxial transistor BFG10W encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

Customers Who Bought This Item Also Bought

BFG135
US $$2.30 - 2.50 / Piece

Supply Ability:8000Day

View details
BFG135A
US $$1.00 - 5.00 / Piece

Supply Ability:10000Week

View details
BFG193
US $$0.35 - 0.38 / Piece

Supply Ability:10000Week

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

BFG10W

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Capacitors(4587)

Resistors(1299)

LED Products(5882)

Kits(573)

Soldering, Desoldering, Rework Products(854)

Optical Inspection Equipment(251)