Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCES collector-e...
BFG540/X: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. ...
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SYMBOL | PARAMETER | CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter |
- |
- |
20 |
V |
VCES | collector-emitter voltage | RBE = 0 |
- |
- |
15 |
V |
IC | DC collector current |
- |
- |
120 |
mA | |
Ptot | total power dissipation | Ts 60 °C; note 1 |
- |
- |
400 |
mW |
hFE | DC current gain | IC = 40 mA; VCE = 8 V; Tj = 25 °C |
100 |
120 |
250 |
|
Cre | feedback capacitance | IC = 0; VCE = 8 V; f = 1 MHz |
- |
0.5 |
- |
pF |
fT | transition frequency | IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C |
- |
9 |
- |
GHz |
GUM | maximum unilateral power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
18 |
- |
dB |
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
11 |
- |
dB | ||
|s21|2 | insertion power gain | IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
15 |
16 |
- |
dB |
F | noise figure | Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.3 |
1.8 |
dB |
Gs = Gopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
- |
1.9 |
2.4 |
dB | ||
Gs = Gopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
- |
2.1 |
- |
dB |
NPN silicon planar epitaxial transistors BFG540/X, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.
The transistors BFG540/X are mounted in plastic SOT143B and SOT143R packages.