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BFG540/X

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCES collector-e...

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BFG540/X: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. TYP. ...

BFG540/X Data Sheet

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Part Number:
BFG540/X
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO collector-base voltage open emitter
-
-
20
V
VCES collector-emitter voltage RBE = 0
-
-
15
V
IC DC collector current  
-
-
120
mA
Ptot total power dissipation Ts 60 °C; note 1
-
-
400
mW
hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C
100
120
250
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz
-
0.5
-
pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
-
9
-
GHz
GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
-
18
-
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
-
11
-
dB
|s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
15
16
-
dB
F noise figure Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.3
1.8
dB
Gs = Gopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
-
1.9
2.4
dB
Gs = Gopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
-
2.1
-
dB



Description

NPN silicon planar epitaxial transistors BFG540/X, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.

The transistors BFG540/X are mounted in plastic SOT143B and SOT143R packages.




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