BFG424F

The BFG424F is a type of NPN 25 GHP wideband transistor. They package is NPN double polysilicon wideband transi stor with buried layer for low voltage applications.

Features of the BFG424F are:(1) very high power gain; (2) low oise figure; (3) high trasitio frequecy; (4) emitter is th ermal lead; (5) low feedback capacitace.

The quick reference data and characteristics of the BFG424F can be summarized as:(1):DC current gain is 50 min, 80 typ and 120 max(IC = 25 mA; VCE = 2 V;Tj = 25 °C);(2):collector-base capacitance is 102fF when VCB is 2 V and f is 1 MHz;(3):transition frequency is 25GHz(IC = 25 mA; VCE = 2 V;f = 2 GHz; Tamb = 25 °C);(4):maximum power ga in is 23dB typ(IC = 25 mA; VCE = 2 V;f = 2 GHz; Tamb = 25 °C); (5):noise figure is 1.2dB typ(IC = 2 mA; VCE = 2 V;f = 2 GHz; TS = Gopt.Characteristics:(1):collector-base breakdown voltage is 10V min when IC is 2.5 mA and IE is 0 mA;(2)collector-emitter breakdown voltage is 4.5V min when IC is 1 mA and IB is 0 mA;(3):collector-base cut-off cur rent is 15nA when IE is 0 mA and VCB is 4.5V;(4):collector-base capacitance is 102fF when VCB is 2 V and f is 1 MHz, etc.