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BF909R

Features: · Specially designed for use at 5 V supply voltage· High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz· Superior cross-modulation performance during AGC.Application· ...

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SeekIC No. : 004299584 Detail

BF909R: Features: · Specially designed for use at 5 V supply voltage· High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise g...

BF909R Data Sheet

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Part Number:
BF909R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.


Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage
-
-
7
V
ID drain current
-
-
40
mA
Ptot total power dissipation
-
-
200
mW
Tj operating junction temperature
-
-
150
°C
yfs forward transfer admittance
36
43
50
mS
Cig1-s input capacitance at gate 1
-
3.6
4.3
pF
Crs reverse transfer capacitance
f = 1 MHz
-
35
50
pF
F noise figure
f = 800 MHz
-
2
2.8
dB



Description

Enhancement type field-effect transistor BF909R in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.




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