Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detector...
BFG520W/X: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as ana...
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RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
SYMBOL | PARAMETER | CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
VCBO | collector-base voltage | open emitter |
- |
- |
20 |
V |
VCES | collector-emitter voltage | RBE = 0 |
- |
- |
15 |
V |
IC | DC collector current |
- |
- |
70 |
mA | |
Ptot | total power dissipation | Ts 85 °C |
- |
- |
500 |
mW |
hFE | DC current gain | IC = 20 mA; VCE = 6 V; Tj = 25 °C |
100 |
120 |
250 |
|
Cre | feedback capacitance | IC = 0; VCE = 8 V; f = 1 MHz |
- |
0.35 |
- |
pF |
fT | transition frequency | IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C |
- |
9 |
- |
GHz |
GUM | maximum unilateral power gain | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C |
- |
17 |
- |
dB |
|s21|2 | insertion power gain | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C |
16 |
17 |
- |
dB |
F | noise figure | Gs = Gopt; IC = 5 mA; VCE = 6 V; f = 900 MHz |
-
|
1.1 |
1.6 |
dB
|