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BFG520W/X

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detector...

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SeekIC No. : 004299670 Detail

BFG520W/X: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationRF front end wideband applications in the GHz range, such as ana...

BFG520W/X Data Sheet

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Part Number:
BFG520W/X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Application

RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO collector-base voltage open emitter
-
-
20
V
VCES collector-emitter voltage RBE = 0
-
-
15
V
IC DC collector current  
-
-
70
mA
Ptot total power dissipation Ts 85 °C
-
-
500
mW
hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 °C
100
120
250
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz
-
0.35
-
pF
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
-
9
-
GHz
GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
-
17
-
dB
|s21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
16
17
-
dB
F noise figure Gs = Gopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
-
1.1
1.6
dB



Description

NPN silicon planar epitaxial transistor BFG520W/X in a 4-pin dual-emitter SOT343N plastic package.


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