Features: Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.Application` UHF applications such as: UHF television tuners Professional communication equipment.PinoutSpecifications SYMBOL PARAMETER CONDITIONS TYP. MAX. UNI...
BF989: Features: Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.Application` UHF applications such as: UHF television tuners Professional commun...
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Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
VDS | drain-source voltage | - | 20 | V | |
ID | drain current | - | 20 | mA | |
Ptot | total power dissipation | up to Tamb = 60 °C | - | 200 | mW |
Tj | junction temperature | - | 150 | °C | |
|Yfs| | transfer admittance | f = 1 kHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V | 12 | - | mS |
Cig1-s | input capacitance at gate 1 | f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V | 1.8 | - | pF |
Crs | feedback capacitance | f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V | 25 | - | fF |
F | noise figure at 800 MHz | f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA; VDS = 10 V; VG2-S = 4 V |
2.8 | - | dB |
Depletion type field-effect transistor BF989 in a plastic SOT143 microminiature package with interconnected source and substrate.