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Index I : IRF3415S,IRF3415PBF,IRF150SMD,
IRF3415S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...IRF3415PBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 43A TO-220ABThe IRF3415PBF is one member of the IRF3415 family which is designed as the HEXFET Power MOSFET that has some points of features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)...IRF3415L
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3415L benefit, combined with the fast switching speed and ruggedi...IRF3415
Mfg:IR Pack:TO-220 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 43A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3415 benefit, combined with the fast switching speed and ruggedize...IRF340
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest '' State of the Art!± design achieves: very low on-...IRF3315S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315S benefit, combined with the fast switching speed and ruggedi...IRF3315PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 21A TO-220ABFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315PbF benefit, combined with the fast switching speed and ruggedi...IRF3315L
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315L benefit, combined with the fast switching speed and ruggedi...IRF3315
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. IRF3315 benefit, combined with the fast switching speed and ruggedize...IRF3305PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-220AB IRF3305PbF is a kind of automotive MOSFET.Here you can get some information about the features.First is that IRF3305PbF is designed to support linear Gate Drive Applications.The second is 175 operating temperature....IRF330
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very low on-s...IRF323
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF323 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...IRF322
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...IRF321
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. IRF321 are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode ...IRF3205ZSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A D2PAKSpecifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...IRF3205ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF...IRF3205ZPbF
Mfg:IR Pack:TO-220 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...IRF3205ZLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-262Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design of IRF32...IRF3205ZL
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRF3205ZL utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this des...IRF3205Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRF3205Z utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this desi...IRF3205SPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 110A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRF3205S
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 110A D2PAKThe IRF3205S is a HEXFET power MOSFET.Advanced HEXFET Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with ...IRF3205PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 110A TO-220ABAdvanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and rugge...IRF3205L
Mfg:IR Pack:TO-220 D/C:09+ Vendor:Other Category:Other
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. IRF3205L benefit, combined with the fast switching speed and rug...IRF3205
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 110A TO-220ABPower MOSFETs of the IRF3205 from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe...IRF320
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of ...IRF30AS
Vendor:Other Category:Other
IRF3007SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 62A D2PAKSpecifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this H...IRF3007PbF
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007PbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional...IRF3007LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 62A TO-262Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs of the IRF3007LPbF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional...IRF3007L
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
IRF3007
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF3007, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fe...IRF3000
Mfg:IOR Pack:SMD-8 D/C:04+ Vendor:Other Category:Other
IRF300
Mfg:IR Pack:SSOP8 D/C:2003 Vendor:Other Category:Other
IRF2907ZSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRF2907ZSPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features ...IRF2907ZS-7PPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 160A D2PAK7Specifically designed for high current, high reliabil- ity applications, this HEXFET® Power MOSFET of the IRF2907ZS-7PPbF utilizes the latest processing techniques and ad- vanced packaging technology to achieve extr...IRF2907ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF2907ZS, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...IRF2907ZPbF
Mfg:IR Pack:T0-20 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2907ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features f...IRF2907ZLPbF
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 170A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2907ZL
Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF2907ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...IRF2907Z
Mfg:IR Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a...IRF2903ZSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2903ZS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRF2903ZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of t...IRF2903ZPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2903ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features o...IRF2903ZLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2903ZL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF2903ZL, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of t...IRF2903Z
Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF2903Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th...IRF2807ZPbF
Mfg:682 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2807ZPbF,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of...IRF2807Z
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2807SPbF
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 82A D2PAKAdvanced HEXFET® Power MOSFETs of the IRF2807SPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF2807S
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRF2807PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 82A TO-220ABThe IRF2807PbF is designed as one kind of HEXFET Power MOSFET device that has some points of features:(1)advanced process technology; (2)ultra low on-resistance; (3)dynamic dv/dt rating; (4)175°C operating temperature; (...IRF2807LPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 82A TO-262Advanced HEXFET® Power MOSFETs of the IRF2807LPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...IRF2807L
Mfg:IR Pack:TO-262 D/C:04+ Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs of the IRF2807L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...IRF2807
Mfg:IR Pack:TO220AB D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 82A TO-220ABAdvanced HEXFET Power MOSFETs of the IRF2807 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRF2805SPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 135A D2PAKSpecifically designed for Automotive applications of the IRF2805SPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. Additional features of...IRF2805S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques of the IRF2805S to achieve extremely low on-resistance per silicon area. Additional features of t...IRF2805PbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 75A TO-220ABSpecifically designed for Automotive applications of the IRF2805PbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of...IRF2805LPbF
Mfg:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. Additional features of this product of th...IRF2805L
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are ...IRF2805
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804SPbF
Mfg:N/A Pack:NA/ D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A D2PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804S-7PPbF
Mfg:IR Pack:D2-PAK 7PIN D/C:0725+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 160A D2PAK-7Specifically designed for Automotive applications,this HEXFETTM Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the ...IRF2804S-7P
Mfg:TO-263 Pack:150 D/C:IR Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804PbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A TO-220ABSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804LPbF
Mfg:3381 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A TO-220-3Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804L
Mfg:IR Pack:04+ D/C:262 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 75A TO-262Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of th...IRF2804
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a...IRF250SMD
Vendor:Other Category:Other
IRF250
Vendor:Other Category:Other
IRF247
Mfg:IR\MOT Pack:. D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...IRF246
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of o...IRF245
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...IRF244
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of o...IRF240SMD
Vendor:Other Category:Other
IRF240
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
ThisN-Channelenhancementmodesilicongatepowereld effect transistor of the IRF240 is an advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation....IRF-24
Vendor:Other Category:Other
Inductors - Epoxy Conformal Coated, Axial Leaded IRF-24IRF237
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...IRF236
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...IRF235
Mfg:IR Pack:TO-3 D/C:03+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...IRF234
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode ...IRF233
Mfg:IR/HAR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of o...IRF232
Mfg:IR/HAR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...IRF231
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...IRF230
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of op...IRF223
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...IRF222
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...IRF221
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of...IRF2204S
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design of t...IRF2204
Mfg:IR Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRF2204, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t...IRF220
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of ...IRF200
Vendor:Other Category:Other
IRF1902TRPBF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 20V 4.2A 8-SOICThe IRF1902TRPBF is designed as one kind of N-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area that provides the...IRF1902PbF
Mfg:IR Pack:SOP-8 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 20V 4.2A 8-SOICThese N-Channel HEXFET® power MOSFETs of the IRF1902PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the desig...IRF1902
Mfg:IOR Pack:SMD-8 Vendor:Other Category:Other
These N-Channel HEXFET power MOSFETs of the IRF1902 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer wi...IRF1704
Mfg:IR/FSC Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET power MOSFET of the IRF1704 has a 200 max operating temperature with a Stripe Plana design that utilizes the latest processing techniques to achieve ...IRF1607PbF
Mfg:IR Pack:TO-220 D/C:07+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 142A TO-220ABSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea...IRF1607
Vendor:Other Category:Other
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features...IRF150SMD
Vendor:Other Category:Other