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IRF231

Features: `8.0A and 9.0A, 150V and 200V`rDS(ON)= 0.4and 0.6`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Related Literature-TB334 Guidelines for Soldering Surface MounComponents to PC Boards Sp...

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SeekIC No. : 004376407 Detail

IRF231: Features: `8.0A and 9.0A, 150V and 200V`rDS(ON)= 0.4and 0.6`Single Pulse Avalanche Energy Rated`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Inpu...

IRF231 Data Sheet

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Part Number:
IRF231
Supply Ability:
5000

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Upload time: 2024/11/23

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Product Details

Description



Features:

`8.0A and 9.0A, 150V and 200V
`rDS(ON)= 0.4and 0.6
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Related Literature
-TB334  Guidelines for Soldering Surface Moun
Components to PC Boards


Specifications

    IRF230

IRF231

 IRF232 IRF33 UNITS
Drain to Source Voltage (Note 1) VDS 200 150 200 150 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 200 150 200 150 V
Continuous Drain Current ID 9.0 9.0 8.0 8.0 A
TC = 100
 ID 6.0 6.0 5.0 5.0 A
Pulsed Drain Current (Note 3) IDM 36 36 32 32 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 75 75 W
Linear Derating Factor   0.6

0.6

 0.6 0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 150 150 150 150 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRF231 are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from ntegrated circuits.

Formerly developmental type IRF231.




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