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IRF2903Z

Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 260 A ID @ TC = 100 Continuous D...

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SeekIC No. : 004376431 Detail

IRF2903Z: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ T...

IRF2903Z Data Sheet

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Part Number:
IRF2903Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/27

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax




Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 260 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (Silicon Limited) 180
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 1020
ID @ TC = 25 Power Dissipation 290 A
Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS (Thermally limited Single Pulse Avalanche Energy 290 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 820
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)





Description

Specifically designed for Automotive applications of the IRF2903Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2903Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.






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