IRF3007

Features: `Ultra Low On-Resistance`175 Operating Temperature` Fast Switching`Repetitive Avalanche Allowed up to Tjmax`Automotive [Q101] QualifiedApplication42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silic...

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IRF3007 Picture
SeekIC No. : 004376438 Detail

IRF3007: Features: `Ultra Low On-Resistance`175 Operating Temperature` Fast Switching`Repetitive Avalanche Allowed up to Tjmax`Automotive [Q101] QualifiedApplication42 Volts Automotive Electrical SystemsSpec...

floor Price/Ceiling Price

Part Number:
IRF3007
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/14

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Product Details

Description



Features:

`Ultra Low On-Resistance
`175 Operating Temperature
` Fast Switching
`Repetitive Avalanche Allowed up to Tjmax
`Automotive [Q101] Qualified



Application

42 Volts Automotive Electrical Systems


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 80 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9) 56
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 320
PD @ TC = 25 Maximum Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 280 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 946
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)



Description

Specifically designed for Automotive applications of the IRF3007, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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