IRF2807Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Power - Max: 170W
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 3270pF @ 25V
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V


Features:

􀁏· Advanced Process Technology
􀁏· Ultra Low On-Resistance
􀁏· Dynamic dv/dt Rating
􀁏· 175°C Operating Temperature
􀁏· Fast Switching
􀁏· Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	89	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V(See Fig. 9)	63
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	350
PD @ TC = 25	Max. Power Dissipation	170	W
	Linear Derating Factor	1.1	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	160	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2807Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.