IRF1902 Selling Leads, Price trend, IRF1902 DataSheet download, circuit diagram from SeekIC.com

Features: ·Ultra Low On-Resistance·N-Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage 20 V ID @ TA =25 Continuous Drain Current,VGS @ 4.5V 4.2 A ID @ TA =70 Continuous Drain Current,VGS @ 4.5V 3.4 IDM...

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SeekIC No. : 004376398 Detail

IRF1902: Features: ·Ultra Low On-Resistance·N-Channel MOSFET·Surface Mount·Available in Tape & ReelSpecifications Parameter Max. Units VDS Drain-Source Voltage 20 V ID @ TA =25 Continu...

IRF1902 Data Sheet

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Part Number:: IRF1902
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
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Upload time: 2024/11/23

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MOSFET N-CH 60V 84A TO-220AB

Product Details

Description

Features:

·Ultra Low On-Resistance
·N-Channel MOSFET
·Surface Mount
·Available in Tape & Reel

Specifications

	Parameter	Max.	Units
V_DS	Drain-Source Voltage	20	V
I_D @ T_A =25	Continuous Drain Current,VGS @ 4.5V	4.2	A
I_D @ T_A =70	Continuous Drain Current,VGS @ 4.5V	3.4
I_DM	Pulsed Drain Current	17
P_D @ T_A =25	Maximum Power Dissipation	2.5	W
P_D @ T_A =70	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.05	mW/
V_GS	Gate-to-Source Voltage	±12	V
T_JT_STG	Operating and Junction Storage Temperature Range	-55 to + 150

Description

These N-Channel HEXFET power MOSFETs of the IRF1902 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 of the IRF1902 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

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IRF1902

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