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IRF1010E

MOSFET N-CH 60V 84A TO-220AB

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SeekIC No. : 004376347 Detail

IRF1010E: MOSFET N-CH 60V 84A TO-220AB

IRF1010E Data Sheet

floor Price/Ceiling Price

US $ 1.25~1.25 / Piece | Get Latest Price
Part Number:
IRF1010E
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~200
  • Unit Price
  • $1.25
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated


Specifications

  Parameter Max. Units
ID @ TC =25 Continuous Drain Current,VGS @ 10V 84 A
ID @ TC =100 Continuous Drain Current,VGS @ 10V 59
IDM Pulsed Drain Current 330
PD @ TC =25 Power Dissipation 200 W
  Linear Derating Factor 1.4 W/
VGS Gate-to-Source Voltage ±20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)  



Description

Advanced HEXFET  Power MOSFETs of the IRF1010E from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of the IRF1010E is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF1010E
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C84A
Rds On (Max) @ Id, Vgs12 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 3210pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF1010E
IRF1010E



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