FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 84A
Supplier Device Package: TO-262
Input Capacitance (Ciss) @ Vds: 3210pF @ 25V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
Features: `Advanced Process Technology
`Surface Mount (IRF1010ES)
`Low-profile through-hole (IRF1010EL
`175 Operating Temperature
`Fast Switching
`Fully Avalanche RatedSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC =25 |
Continuous Drain Current,VGS @ 10V |
84 |
A |
| ID @ TC =100 |
Continuous Drain Current,VGS @ 10V |
59 |
| IDM |
Pulsed Drain Current |
330 |
| PD @ TC =25 |
Power Dissipation |
200 |
W |
| |
Linear Derating Factor |
1.4 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| IAR |
Avalanche Current |
50 |
A |
| EAR |
Repetitive Avalanche Energy |
17 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
4.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
| |
Mounting Torque, 6-32 or M3 screw |
10 lbf.in (1.1 N.m) |
|
DescriptionAdvanced HEXFET Power MOSFETs of the IRF1010EL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak of the IRF1010EL is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. TheD2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) of the IRF1010EL is available for low- profile applications.
IRF1010EL Data Sheet
