© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Response in 12 hours
Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
HEXFET® MOSFET technology IRFN9140 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconduc...
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
HEXFET technology IRFN440 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transi...
Vendor:Other Category:Other
100 Volt, 0.028W, HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit IRFN3710, combined with ...
Vendor:Other Category:Other
400 Volt, 0.315W HEXFET
HEXFET technology IRFN350 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficientgeometry achieves very low on-state resistance combined with high tra...
Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
HEXFET technology IRFN250 is the key to International Rectifier!advanced line of power MOSFET transistors. The effi- cient geometry achieves very low on-state resistance com-bined with high transconductance.HEXFET trans...
Vendor:Other Category:Other
Mfg:IR Pack:BGA D/C:30 Vendor:Other Category:Other
HEXFET technology IRFN240 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.HEXFET transis...
Vendor:Other Category:Other
These N-Channel enhancement mode power field effecransistors IRFN214B are produced using Fairchild's proprietaryplanar, DMOS technology.This advanced technology IRFN214B has been especially tailored t minimize ...
Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:SMD-1 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
HEXFET® MOSFET technology IRFMJ044 is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry design achieves very low on-state resistance combined with high transconduct...
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-254 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 500V 19A TO-254AA
Mfg:IR Pack:TO-3P D/C:50 Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO254AA Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:MOT D/C:98+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:06+ D/C:SOT-223 Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFM220B are produced using Fairchild's proprietary planar, DMOS technology.This advanced technology of the IRFM220B has been especially tailored to ...
Mfg:FAIRCHILD D/C:00+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:IR Pack:TO D/C:70 Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Other Category:Other
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:1989 D/C:TO220-2 Vendor:Other Category:Other
Mfg:IR Pack:9,669 Vendor:Other Category:Other
Third Generation HEXFETs of the IRFL9110PbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 pa...
Vendor:Other Category:Other
Power MOSFET IRFL9110, SiHFL9110
Vendor:Other Category:Other
The IRFL9014PbF is from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is designed ...
Vendor:Other Category:Other
Power MOSFET IRFL9014, SiHFL9014
Mfg:IOR Pack:TO223 Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package of the IRFL90...
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 2.6A SOT223
Mfg:IR Pack:SOT-223 D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 2.6A SOT223
Mfg:IR Pack:2007+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 1.6A SOT223Fifth Generation HEXFETs from International Rectifier IRFL4310PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ...
Mfg:IOR Pack:TO223 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 1.6A SOT223Fifth Generation HEXFETs of the IRFL4310 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed ...
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 3.7A SOT223Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
Mfg:IOR Pack:TO223 Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized d...
Vendor:Other Category:Other
Mfg:VISHAY D/C:07+ Vendor:Other Category:Other
Third Generation HEXFETs IRFL214PbFfrom International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package IRF...
Vendor:Other Category:Other
Power MOSFET IRFL214, SiHFL214
Mfg:200 Pack:IOR Vendor:Other Category:Other
Third generation Power MOSFETs of the IRFL214 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package of the IR...
Vendor:Other Category:Other
The IRFL210PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. IRFL210PbF has eight features...
Vendor:Other Category:Other
Power MOSFET IRFL210, SiHFL210
Mfg:IR Pack:SOT-223 Vendor:Other Category:Other
Third Generation HEXFETs IRFL110PbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package IR...
Vendor:Other Category:Other
Power MOSFET IRFL110, SiHFL110
Mfg:IOR Pack:TO223 Vendor:Other Category:Other
Third Generation HEXFETs of the IRFL110 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 packag...
Mfg:IR Pack:SOT-223 D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized d...
D/C:7100
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 5.1A SOT223Specifically designed for Automotive applications of the IRFL024ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features o...
Vendor:Other Category:Other
The IRFL024Z is a kind of HEXFET P-channel power MOSFET which uses the lastest processing techniques to achieve extremely low on-resistance per silicon area. It can be used in automotive applications and a wide variety o...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 2.8A SOT223The IRFL024NPbF has 7 features.The first one is Surface Mount.The second one is advanced process technology.The third one is ultra low on-resistance.The fourth one is Fast Switching.The fifth one is Fully Avalanche Rated...
Mfg:IOR Pack:T0223 Vendor:Other Category:Other
Fifth Generation HEXFETs of the IRFL024N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed a...
Vendor:Other Category:Other
The IRFL014PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It has seven features.The fir...
Mfg:IR Pack:SOT-223 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 1.9A SOT223Fifth Generation HEXFET® MOSFETs IRFL014NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...
Vendor:Other Category:Other
Fifth Generation HEXFET® MOSFETs IRFL014N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...
Vendor:Other Category:Other
Power MOSFET IRFL014, SiHFL014
Vendor:Other Category:Other
The IRFK4HE50 has four features.The first one is high current capability.The second one is UL recognised E78996.The third one is electrically isolated base plate.The fourth one is reduced easy assembly into equipment.
T...
Vendor:Other Category:Other
The IRFK3D450 is has four points of features: (1)high current capability; (2)UL recognised E78996; (3)electrically isolated base plate; (4)easy assembly into equipment. The HEX-pak utilises the well-proven HEXFET die, co...
Vendor:Other Category:Other
The IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-240 package which is suited to pow...
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs IRFIZ48V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR Pack:03+ D/C:220 Vendor:Other Category:Other
Fifth Generation HEXFETs IRFIZ48N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRFIZ48G, SiHFIZ48G
Mfg:TO-220FullPak(Iso) Pack:7850 D/C:IR Vendor:Other Category:Other
Fifth Generation HEXFETs IRFIZ46N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and...
Mfg:IR Pack:03+ D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 31A TO220FPFifth Generation HEXFETs IRFIZ44N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and rugge...
Vendor:Other Category:Other
Power MOSFET IRFIZ44G, SiHFIZ44G
Mfg:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs IRFIZ34VPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs IRFIZ34V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed...
Mfg:IR Pack:TO-220 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 21A TO220FPFifth Generation HEXFETs IRFIZ34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and rugge...
Vendor:Other Category:Other
The IRFIZ34GPbF has 7 features.The 1st one is dynamic dv/dt rating.The 2nd one is isolated package.The 3rd one is that the high voltage isolation is 2.5KVRMS.The 4th one is 175 operating temperature.The 5th one is ...
Vendor:Other Category:Other
Power MOSFET IRFIZ34G, SiHFIZ34G
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs IRFIZ34E from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and rugge...
Mfg:IR Pack:TO Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs IRFIZ24V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...
Mfg:IR D/C:440 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 14A TO220FPFifth Generation HEXFETs IRFIZ24NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r...
Mfg:IR Pack:TO-220F D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 14A TO220FPFifth Generation HEXFETs IRFIZ24N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRFIZ24G, SiHFIZ24G
Vendor:Other Category:Other
third generation HEXFETs IRFIZ24G from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 fullpak elim...
Mfg:TO-220FullPak(Iso) Pack:7850 D/C:IR Vendor:Other Category:Other
Fifth Generation HEXFETs IRFIZ24E from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...
Vendor:Other Category:Other
Power MOSFET IRFIZ14G, SiHFIZ14G
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third deneration Power MOSFETs IRFIZ14G from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.The TO-220 Fullpak IRFIZ14G elimin...
Vendor:Other Category:Other
The IRFIBF30GPbF is designed as third generation HEXFET from international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effective...
Vendor:Other Category:Other
Power MOSFET IRFIBF30G, SiHFIBF30G
© 2008-2012 SeekIC.com Corp.All Rights Reserved.