FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 1.9A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 55V
Input Capacitance (Ciss) @ Vds: 190pF @ 25V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
Specifications
|
Parameter |
Max. |
Units |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V** |
2.7 |
A |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V* |
1.9 |
A |
| ID @ TA = 75°C |
Continuous Drain Current, VGS @ 10V* |
1.5 |
A |
| IDM |
Pulsed Drain Current |
15 |
A |
| PD @ TA = 25°C |
Power Dissipation (PCB Mount)** |
2.1 |
W |
| PD @ TA = 25°C |
Power Dissipation (PCB Mount)** |
1.0 |
W |
|
Linear Derating Factor (PCB Mount)* |
8.3 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
48 |
mJ |
| IAR |
Avalanche Current |
1.7 |
Aa |
| EAR |
Repetitive Avalanche Energy* |
0.1 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
DescriptionFifth Generation HEXFET® MOSFETs IRFL014N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package IRFL014N is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
IRFL014N Data Sheet
