MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 1.9 A | ||
Resistance Drain-Source RDS (on) : | 160 m Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Tube |
Characteristics |
PARAMETER |
Max. |
Unit |
Continuous Drain Current, VGS @ 10V |
ID @ TA = 25
|
2.7 |
A |
Continuous Drain Current, VGS @ 10V |
ID @ TA = 25
|
1.9 |
A |
Continuous Drain Current, VGS @ 10V |
ID @ TA = 70
|
1.5 |
A |
Pulsed Drain Current |
IDM |
15 |
A |
Power Dissipation (PCB Mount) |
PD @TA = 25
|
2.1 |
W |
Power Dissipation (PCB Mount) |
PD @TA = 25
|
1.0 |
W |
Linear Derating Factor (PCB Mount)* |
8.3 |
mW/ | |
Gate-to-Source Voltage |
VGS |
± 20 |
V |
Single Pulse Avalanche Energy |
EAS |
48 |
mJ |
Avalanche Current |
IAR |
1.7 |
A |
Repetitive Avalanche Energy |
EAR |
0.10 |
mJ |
Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
Junction and Storage Temperature Range |
Tj,Tstg |
−55~150 |
Fifth Generation HEXFET® MOSFETs IRFL014NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
Its unique package design IRFL014NPbF allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Technical/Catalog Information | IRFL014NPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 1.9A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.9A, 10V |
Input Capacitance (Ciss) @ Vds | 190pF @ 25V |
Power - Max | 1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 11nC @ 10V |
Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFL014NPBF IRFL014NPBF |