IRFL014NPBF

MOSFET

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IRFL014NPBF Picture
SeekIC No. : 00153138 Detail

IRFL014NPBF: MOSFET

floor Price/Ceiling Price

US $ .17~.49 / Piece | Get Latest Price
Part Number:
IRFL014NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.49
  • $.29
  • $.18
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 160 m Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 1.9 A
Resistance Drain-Source RDS (on) : 160 m Ohms


Features:

· Surface Mount
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
· Lead-Free



Specifications

Characteristics
PARAMETER
Max.
Unit
Continuous Drain Current, VGS @ 10V
ID @ TA = 25
2.7
A
Continuous Drain Current, VGS @ 10V
ID @ TA = 25
1.9
A
Continuous Drain Current, VGS @ 10V
ID @ TA = 70
1.5
A
Pulsed Drain Current
IDM
15
A
Power Dissipation (PCB Mount)
PD @TA = 25
2.1
W
Power Dissipation (PCB Mount)
PD @TA = 25
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/
Gate-to-Source Voltage
VGS
± 20
V
Single Pulse Avalanche Energy
EAS
48
mJ
Avalanche Current
IAR
1.7
A
Repetitive Avalanche Energy
EAR
0.10
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
V/ns
Junction and Storage Temperature Range
Tj,Tstg
−55~150



Description

Fifth Generation HEXFET® MOSFETs IRFL014NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.

Its unique package design IRFL014NPbF allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.




Parameters:

Technical/Catalog InformationIRFL014NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C1.9A
Rds On (Max) @ Id, Vgs160 mOhm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds 190pF @ 25V
Power - Max1W
PackagingTube
Gate Charge (Qg) @ Vgs11nC @ 10V
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFL014NPBF
IRFL014NPBF



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