IRFL214PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Configuration : Dual Dual Drain
Package / Case : SOT-223
Resistance Drain-Source RDS (on) : 2 Ohms
Continuous Drain Current : 0.79 A


Features:

·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current, VGS @ 10V	0.79	A
ID @ TC=70	Continuous Drain Current, VGS @ 10V	0.5	A
IDM	Pulsed Drain Current	6.3	A
PD @ TC=25	Power Dissipation	3.1	W
PD @ TA=25	Power Dissipation	2.0	W
	Linear Derating Factor	0.025	W/
	Linear Derating Factor (PCB Mount)**	0.017	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	50	mJ
IAR	Avalanche Current	0.79	A
EAR	Repetitive Avalanche Energy	0.31	mJ
dv/dt	Peak Diode Recovery dv/dt	4.8	V/ns
Tj,TSTG	Junction and Storage Temperature Range	-55 to +150
	Soldewring Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third Generation HEXFETs IRFL214PbFfrom International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package IRFL214PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.