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IRFM110A

Features: •Avalanche Rugged Technology•Rugged Gate Oxide Technology•Lower Input Capacitance•Improved Gate Charge•Extended Safe Operating Area•Lower Leakage Current : 10 A (Max.) @ VDS = 100V•Lower RDS(ON) : 0.289 (Typ.)Specifications Symbol Param...

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SeekIC No. : 004377182 Detail

IRFM110A: Features: •Avalanche Rugged Technology•Rugged Gate Oxide Technology•Lower Input Capacitance•Improved Gate Charge•Extended Safe Operating Area•Lower Leakage Curren...

IRFM110A Data Sheet

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Part Number:
IRFM110A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Avalanche Rugged Technology
•Rugged Gate Oxide Technology
•Lower Input Capacitance
•Improved Gate Charge
•Extended Safe Operating Area
•Lower Leakage Current : 10 A (Max.) @ VDS = 100V
•Lower RDS(ON) : 0.289 (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TA=25 )
1.5
A
Continuous Drain Current (TA=70 )
1.19
IDM
Pulsed Drain Current
12
A
VGS
Gate-to-Source Voltage
+_ 20
V
EAS
Single Pulse Avalanche Energy
60
mJ
IAR
Avalanche Current
1.5
A
EAR
Repetitive Avalanche Energy
1.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
1.5
V/ns
PD
 Total Power Dissipation (TA=25 )
Linear Derating Factor
2
0.016
W
W/
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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