Position: Home  > All Categories> Integrated Circuits (ICs) > IRFIZ48V

IRFIZ48V

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 39 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current 290 A PD @TC = 25°C Power Dissipation 43 W Linear Dera...

product image

IRFIZ48V Picture
See larger image
SeekIC No. : 004377164 Detail

IRFIZ48V: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 39 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM ...

IRFIZ48V Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFIZ48V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/2

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 39 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A
IDM Pulsed Drain Current 290 A
PD @TC = 25°C Power Dissipation 43 W
  Linear Derating Factor 0.29 mW/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 72 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to +175 °C
  Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew		 300 (1.6mm from case )
10 lbf•in (1.1N•m)		 °C



Description

Advanced HEXFET® Power MOSFETs IRFIZ48V from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak IRFIZ48V is mounted to a heatsink using a single clip or by a single screw fixing.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
RF and RFID
X3C26P1-30S
1P620S
Integrated Circuits (ICs)
TA8435H
1MB12-140
Switches
US32DMRJ
HBGQ22P-11ET
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Filters
PICO2205A
PICO2204A
View more