MOSFET N-Chan 60V 8.0 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 Full-Pak | Packaging : | Tube |
PARAMETER |
SYMBOL |
LIMIT |
UNIT | ||
Gate-Source Voltage |
VGS |
± 20 |
V | ||
Continuous Drain Current |
VGS at 10 V |
TC = 25 |
ID |
8.0 |
A |
TC = 100 |
5.7 | ||||
Pulsed Drain Currenta |
IDM |
32 | |||
Linear Derating Factor |
0.18 |
W/ | |||
Single Pulse Avalanche Energyb |
EAS |
47 |
mJ | ||
Maximum Power Dissipation |
TC = 25 |
PD |
27
|
W | |
Peak Diode Recovery dV/dtc |
dV/dt |
4.5 |
V/ns | ||
Operating Junction and Storage Temperature Range |
TJ, Tstg |
- 55 to + 175 |
|||
Soldering Recommendations (Peak Temperature) |
for 10 s |
300d | |||
Mounting Torque |
6-32 or M3 screw |
10 |
lbf ` in | ||
1.1 |
N ` m |
Third deneration Power MOSFETs IRFIZ14G from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 Fullpak IRFIZ14G eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.