IRFIZ14G

MOSFET N-Chan 60V 8.0 Amp

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IRFIZ14G Picture
SeekIC No. : 00158610 Detail

IRFIZ14G: MOSFET N-Chan 60V 8.0 Amp

floor Price/Ceiling Price

US $ .86~.93 / Piece | Get Latest Price
Part Number:
IRFIZ14G
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~730
  • 730~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.93
  • $.89
  • $.87
  • $.86
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Full-Pak Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-220 Full-Pak


Features:

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• 175 Operating Temperature
• Dynamic dv/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available



Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Gate-Source Voltage
VGS
± 20

 V

Continuous Drain Current
VGS at 10 V
TC = 25
ID
8.0
A
TC = 100
5.7
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
0.18
W/
Single Pulse Avalanche Energyb
EAS
47
mJ
Maximum Power Dissipation
TC = 25
PD
27
 
W
Peak Diode Recovery dV/dtc
dV/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf ` in
1.1
N ` m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 , L =856H, RG = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 10 A, dI/dt  90 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply



Description

Third deneration Power MOSFETs IRFIZ14G from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 Fullpak IRFIZ14G eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




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