Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Resistance Drain-Source RDS (on)
: 0.2 Ohms
Continuous Drain Current
: 1.6 A
Features: ·Surface Mount
·Dynamic dv/dt Rating
·Fast Switching
·Ease of Paralleling
·Advanced Process Technology
·Ultra Low On-Resistance
·Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TA=25 |
Continuous Drain Curren VGS@ 10V*** |
2.2 |
A |
|
ID @ TA=25 |
Continuous Drain Curren VGS@ 10V** |
1.6 |
|
ID @ TA=100 |
Continuous Drain Curren VGS@ 10V* |
1.3 |
|
IDM |
Pulsed Drain Current |
13 |
|
PD@ TA= 25 |
CPower Dissipation (PCB Mount)** |
2.1 |
W |
|
PD@ TA= 25 |
Power Dissipatio(PCB Mount)* |
1.0 |
W |
|
|
Linear Derating Factor |
8.3 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
47 |
mJ |
|
IAR |
Avalanche Current |
|
A |
|
EAR |
Repetitive Avalanche Energy |
0.10 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
|
TJ,TSTG |
Junction and Storage Temperature Range |
-55 to 150 |
|
DescriptionFifth Generation HEXFETs from International Rectifier IRFL4310PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package IRFL4310PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Parameters: | Technical/Catalog Information | IRFL4310PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | SOT-223 (3 leads + Tab), SC-73, TO-261AA |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFL4310PBF
IRFL4310PBF
|
IRFL4310PBF Data Sheet
