IRFL4105

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 3.7A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: Tube
Input Capacitance (Ciss) @ Vds: 660pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V**	5.2	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V*	3.7
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V*	3.0
IDM	Pulsed Drain Current 	30
PD @TA = 25°C	Power Dissipation (PCB Mount)**	2.1	W
PD @TA = 25°C	Power Dissipation (PCB Mount)*	1.0	W
	Linear Derating Factor (PCB Mount)*	8.3	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	110	mJ
IAR	Avalanche Current	3.7	A
EAR	Repetitive Avalanche Energy*	0.10	mJ
dv/dt	Peak Diode Recovery dv/dt ƒ	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of the IRFL4105 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application.