IRFIZ24G

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-220 Full-Pak


Description

third generation HEXFETs IRFIZ24G from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

The features of IRFIZ24G can be summarized as (1)isolated package; (2)high voltage lsolation= 2.5KVRMS; (3)sink to lead creepage dist.= 4.8mm; (4)175°C operating temperature; (5)dynamic dv/dt Rating; (6)low thermal resistance

The absolute maximum ratings of IRFIZ24G are (1)ID @ TC = 25°C continuous drain current, VGS @ 10V : 14A; (2)ID @ TC = 100°C continuous drain current, VGS as 10V: 10 A; (3)pulsed drain current IDM: 56A; (4)PD @ TC = 25°C power dissipation: 37W; (5)VGS gate-to-source voltage: ±20V; (6)EAS single pulse avalanche energy: 100 mJ; (7)dv/dt peak diode recovery dv/dt: 4.5 V/ns; (8)TJ, TSTG junction and storage temperature range: -55 to +175°C.