IRFL210PBF

MOSFET N-Chan 200V 0.96 Amp

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SeekIC No. : 00147562 Detail

IRFL210PBF: MOSFET N-Chan 200V 0.96 Amp

floor Price/Ceiling Price

US $ .2~.37 / Piece | Get Latest Price
Part Number:
IRFL210PBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.37
  • $.26
  • $.22
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.96 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 0.96 A


Features:






Specifications






Description

      The IRFL210PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
      IRFL210PbF has eight features.The first one is that it would have surface mount.The second one is that it would be available in tape & reel.The third one is that it would have dynamic dv/dt rating.The fourth one is that it would have fast switching.The fifth one is that it would have ease of paralleling.The sixth one is that it would have simple drive requirements.The seventh one is that it would have dynamic dv/dt rating.The last one is that it would be lead free.That are all the features.
      Some absolute maximum ratings IRFL210PbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 0.96A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 0.60A.The third one is about its pulse drain current which would be 7.7A.The fourth one is about its power dissipation which would be 3.1W.The fifth one is about its linear derating factor which would be 0.025W/°C.The sixth one is about its gate-to source voltage which would be +/-20V.The seventh one is about its signal pulse avalanche energy which would be 50mJ.The eighth one is about its peak diode recovery dv/dt which would be 5.0 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some electrical characteristics IRFL210PbF @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 200V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.30V/°C.The third one is about its static drain to source on resistance which would be max 1.5 with condition of Vgs=10V, Id=0.58A.And so on.For more information please contact us.






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