IRFL110

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.54 Ohms
Continuous Drain Current : 1.5 A
Package / Case : SOT-223
Configuration : Single Dual Drain


Specifications

	Parameter	Max.	Units
ID @ Tc = 25°C	Continuous Drain Current, VGS @ 10 V	1.5	A
ID @ Tc = 100°C	Continuous Drain Current, VGS @ 10 V	0.96
IDM	Pulsed Drain Current	12
PD @Tc = 25°C	Power Dissipation	3.1	W
PD @TA = 25°C	Power Dissipation (PCB Mount)**	2.0
	Linear Derating Factor	0.025	W/°C
	Linear Derating Factor (PCB Mount)**	0.017
VGS	Gate-to-Source Voltage	-/+20	V
EAS	Single Pulse Avalanche Energy	150	mJ
IAR	Avalanche Current	1.5	A
EAR	Repetitive Avalanche Energy	0.31	mJ
dv/dt	Peak Diode Recovery dv/dt	5.5	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150	°C
	Soldewring Temperature, for 10 seconds	300 (1.6mm from case)

Description

Third Generation HEXFETs of the IRFL110 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package of the IRFL110 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.