IRFL1006

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 1.6A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V**	2.3	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V*	1.6
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V*	1.3
IDM	Pulsed Drain Current 	6.4
PD @TA = 25°C	Power Dissipation (PCB Mount)**	2.1	W
PD @TA = 25°C	Power Dissipation (PCB Mount)*	1.0	W
	Linear Derating Factor (PCB Mount)*	8.3	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	54	mJ
IAR	Avalanche Current	1.6	A
EAR	Repetitive Avalanche Energy*	0.1	mJ
dv/dt	Peak Diode Recovery dv/dt ƒƒ	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150	°C

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design of the IRFL1006 that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of the IRFL1006 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application.