IRFL024ZPBF

MOSFET

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IRFL024ZPBF Picture
SeekIC No. : 00153445 Detail

IRFL024ZPBF: MOSFET

floor Price/Ceiling Price

US $ .18~.54 / Piece | Get Latest Price
Part Number:
IRFL024ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.54
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  • $.18
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 57.5 m Ohms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 57.5 m Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free



Specifications

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 5.1 A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V 4.1
IDM Pulsed Drain Current 41
PD @TA = 25 Power Dissipation 2.8  
PD @TA = 25 Power Dissipation 1.0 W
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ± 20 V
E AS (Thermally limited) Single Pulse Avalanche Energy 13 mJ
E AS (Tested ) Single Pulse Avalanche Energy Tested Value 32
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
T J
TSTG
Operating Junction and Storage Temperature Range -55 to + 150



Description

Specifically designed for Automotive applications of the IRFL024ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a  150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRFL024ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFL024ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C5.1A
Rds On (Max) @ Id, Vgs57.5 mOhm @ 3.1A, 10V
Input Capacitance (Ciss) @ Vds 340pF @ 25V
Power - Max2.8W
PackagingBulk
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFL024ZPBF
IRFL024ZPBF



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