IRFN9140

Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Surface Mount· Dynamic dv/dt Rating· Light-weightSpecifications Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -18 A ID @ VGS = -10V, TC=100°C...

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SeekIC No. : 004377222 Detail

IRFN9140: Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Surface Mount· Dynamic dv/dt Rating· Light-weightSpecifications Parameter Units ...

floor Price/Ceiling Price

Part Number:
IRFN9140
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated
· Surface Mount
· Dynamic dv/dt Rating
· Light-weight



Specifications

  Parameter
Units
ID @ VGS = -10V, TC = 25°C
Continuous Drain Current
-18
A
ID @ VGS = -10V, TC=100°C
Continuous Drain Current
-11
IDM
Pulsed Drain Current
-72
PD @ TC = 25°C
Max. Power Dissipation
125
W
Linear Derating Factor
1.0
W/K
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
-18
A
EAR
Repetitive Avalanche Energy
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Package Mounting Surface Temperature
300 (for 5 S)
Weight
2.6 (typical)
g



Description

HEXFET® MOSFET technology IRFN9140 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the IRFN9140 and the heatsink. This improves thermal efficiency and reduces drain capacitance.




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