Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Surface Mount· Dynamic dv/dt Rating· Light-weightSpecifications Parameter Units ID @ VGS = -10V, TC = 25°C Continuous Drain Current -18 A ID @ VGS = -10V, TC=100°C...
IRFN9140: Features: · Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically Isolated· Surface Mount· Dynamic dv/dt Rating· Light-weightSpecifications Parameter Units ...
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Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE ...
Parameter |
Units | ||
ID @ VGS = -10V, TC = 25°C |
Continuous Drain Current |
-18 |
A |
ID @ VGS = -10V, TC=100°C |
Continuous Drain Current |
-11 | |
IDM |
Pulsed Drain Current |
-72 | |
PD @ TC = 25°C |
Max. Power Dissipation |
125 |
W |
Linear Derating Factor |
1.0 |
W/K | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
-18 |
A |
EAR |
Repetitive Avalanche Energy |
12.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 (for 5 S) | ||
Weight |
2.6 (typical) |
g |
HEXFET® MOSFET technology IRFN9140 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the IRFN9140 and the heatsink. This improves thermal efficiency and reduces drain capacitance.