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IRFN044SMD

Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.• SIMPLE DRIVE REQUIREMENTS• LIGHTWEIGHT• HIGH PACKING DENSITIESSpecificationsVGS Gate Source Voltage ±20VID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 34AID Con...

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SeekIC No. : 004377205 Detail

IRFN044SMD: Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.• SIMPLE DRIVE REQUIREMENTS• LIGHTWEIGHT• HIGH PACKING DENSITIESSpeci...

IRFN044SMD Data Sheet

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Part Number:
IRFN044SMD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/23

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Product Details

Description



Features:

• HERMETICALLY SEALED SURFACE MOUNT PACKAGE
• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES


Specifications

VGS            Gate Source Voltage                                                     ±20V
ID              Continuous Drain Current (VGS = 0 , Tcase = 25°C)           34A
ID              Continuous Drain Current (VGS = 0 , Tcase = 100°C)       121A
IDM           Pulsed Drain Current1                                                         136A
PD             Power Dissipation @ Tcase = 25°C                                    75W
                 Linear Derating Factor                                                 0.6W/°C
EAS           Single Pulse Avalanche Energy 2                                      340mJ
dv/dt        Peak Diode Recovery 3                                                    4.5V/ns
TJ , Tstg   Operating and Storage Temperature Range         55 to 150°C
TL             Package Mounting Surface Temperature (for 5 sec)          300°C
RqJC         Thermal Resistance Junction to Case                           1.67°C/W
RqJPCB   Thermal Resistance Junction to PCB (Typical)                    4°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d 2%
2) @ VDD = 25V , L 0.3mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C
3) @ ISD 34A , di/dt £ 100A/ms , VDD BVDSS , TJ 150°C , SUGGESTED RG = 9.1W












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