Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: TO-220FP
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 13 A
Features: ·Advanced Process Technology
· Isolated Package
· High Voltage Isolation = 2.5KVRMS
· Sink to Lead Creepage Dist. = 4.8mm
· Fully Avalanche Rated
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
14 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
10 |
| IDM |
Pulsed Drain Current |
68 |
| PD @TC = 25°C |
Power Dissipation |
29 |
W |
| |
Linear Derating Factor |
0.19 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
71 |
mJ |
| IAR |
Avalanche Current |
10 |
A |
| EAR |
Repetitive Avalanche Energy |
2.9 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| |
Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
|
DescriptionFifth Generation HEXFETs IRFIZ24NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak IRFIZ24NPbF eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Parameters: | Technical/Catalog Information | IRFIZ24NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 7.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 370pF @ 25V |
| Power - Max | 29W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFIZ24NPBF
IRFIZ24NPBF
|
IRFIZ24NPBF Data Sheet
