IRFIZ34GPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 37 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-220 Full-Pak
Resistance Drain-Source RDS (on) : 0.018 Ohms at 10 V


Features:






Specifications






Description

      The IRFIZ34GPbF has 7 features.The 1st one is dynamic dv/dt rating.The 2nd one is isolated package.The 3rd one is that the high voltage isolation is 2.5KVRMS.The 4th one is 175 operating temperature.The 5th one is sink to lead creepage dist.=4.8mm.The 6th one is that the device provedes a low thermal resistance.The last one is lead-free.
      The IRFIZ34GPbF has some absolute maximum ratings.The maximum of continuous drain current is 20A at T_C=25 when V_GS@-10V.The maximum of continuous drain current is 14A at T_C=100 when V_GS@-10V.The maximum of pulsed drain current is 80A.The maximun of power dissipation is 42W at T_C=25.The maximum of linear dereting factor is 0.28W/.The maximum of gate-to-source voltage is within ±20V.The maximum of single pulse avalanche energy is 300mJ.The maximum of peak diode recovery dv/dt is 5.0V/ns.The maximum of soldering temperature is 300(1.6mm from case) for 10 seconds.The operating junction and storage temperature range both are from -55 to +175.
      The following is about part of the electrical characteristics of IRFIZ34GPbF.The minimum of drain-to-source breakdown voltage is 60V under the condition of V_GS=0V and I_D=250A.The typical of breakdown voltage temp.coefficient is 0.065V/ under the condition of reference to 25 and I_D=1mA.The maximum of static drain-to-source on-resistance is 0.050 under the condition of V_GS=10V and I_D=12A.The minimum of gate threshold voltage is 2.0V while the maximum of it is 4.0V under the condition of V_DS=V_GS and I_D=250A.The minimum of forward transconductance is 9.2S under the condition of V_DS=25V and I_D=12A.The maximum of drain-to-source leakage current is 25A under the condition of V_DS=60V and V_GS=0V.The maximum of drain-to-source leakage current is 250A under the condition of V_DS=48V,V_GS=0V and T_J=150.The maximum of gate-to-source forward leakage of the IRFIZ34GPbF is -100nA under the condition of V_GS=-20V.The maximum of gate-to-source forward leakage is 100nA under the condition of V_GS=20V.