Features: • HERMETICALLY SEALED SURFACE OUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.• SIMPLE DRIVE REQUIREMENTS• LIGHTWEIGHT• HIGH PACKING DENSITIESSpecifications VGS Gate Source VoltageID Continuous Drain Current (VGS =0 , Tcase = 25)ID Continuous...
IRFN9140SMD: Features: • HERMETICALLY SEALED SURFACE OUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE.• SIMPLE DRIVE REQUIREMENTS• LIGHTWEIGHT• HIGH PACKING DENSITIESSpecif...
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Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE ...
VGS Gate Source Voltage ID Continuous Drain Current (VGS =0 , Tcase = 25) ID Continuous Drain Current (VGS =0 , Tcase = 100) IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25 Linear Derating Factor EAS Single Pulse Avalanche Energy 2 dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC Thermal Resistance Junction to Case RqJPCB Thermal Resistance Junction to PCB (Typical) |
±20V 14A 9.0A 56A 75W 0.6W/ 500mJ 5.0V/ns 55 to 150 300 1.67/W 4/W |