IRFL024N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 2.8A
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Input Capacitance (Ciss) @ Vds: 400pF @ 25V
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 18.3nC @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V


Features:

· Surface Mount
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
·Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V**	4.0	A
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V*	2.8	A
ID @ TC = 70°C	Continuous Drain Current, VGS @ 10V*	2.3	A
IDM	Pulsed Drain Current	11.2	A
PD @TC = 25°C	Power Dissipation(PCB Mount)**	2.1	W
PD @TC = 25°C	Power Dissipation(PCB Mount)*	1.0	W
	Linear Derating Factor(PCB Mount)*	8.3	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	214	mJ
IAR	Avalanche Current	2.8	A
EAR	Repetitive Avalanche Energy *	0.1	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ	Operating Junction and	-55 to + 150	°C
TSTG	Storage Temperature Range	-55 to + 150	°C

Description

Fifth Generation HEXFETs of the IRFL024N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of the IRFL024N is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.