Features: `1.13A, 200V, RDS(on) = 0.8 @VGS= 10 V`Low gate charge ( typical 12 nC)`Low Crss ( typical 10 pF)`Fast switching`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 200 V ID Drain Current- Continuous (TC= 25)...
IRFM220B: Features: `1.13A, 200V, RDS(on) = 0.8 @VGS= 10 V`Low gate charge ( typical 12 nC)`Low Crss ( typical 10 pF)`Fast switching`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP2...
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Symbol |
Parameter |
IRFP250B |
Units |
VDSS |
Drain-Source Voltage |
200 |
V |
ID |
Drain Current - Continuous (TC= 25) - Continuous (TC= 100) |
1.13 0.9 |
A A |
IDM VGSS EAS IAR EAR dv/dt |
Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3) |
9.0 ±30 65 1.13 0.24 5.5 |
A V mJ A mJ V/ns W |
PD |
Power Dissipation (TC= 25) - Derate above 25 |
24 0.019 |
W/ |
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
Parameter |
Typ. |
Max. |
Units | |
RJA |
Thermal Resistance, Junction-to-Ambient |
- |
52 |
/W |
These N-Channel enhancement mode power field effect transistors of the IRFM220B are produced using Fairchild's proprietary planar, DMOS technology.
This advanced technology of the IRFM220B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.