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IRFM210A

Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 200V·Low RDS(ON) : 1.169 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source...

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SeekIC No. : 004377186 Detail

IRFM210A: Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 200V·Low RDS...

IRFM210A Data Sheet

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Part Number:
IRFM210A
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current : 10 A (Max.) @ VDS = 200V
·Low RDS(ON) : 1.169 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 200 V
ID Continuous Drain Current (TA=25 ) 0.77 A
Continuous Drain Current (TA=70 ) 0.61
IDM Drain Current-Pulsed 6 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 40 mJ
IAR Avalanche Current 0.77 A
EAR Repetitive Avalanche Energy 0.2 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
PD Total Power Dissipation (TA=25 )
Linear Derating Factor		 2
0.016		 W
W/
TJ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



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