IRFL024NPBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 4 A
Package / Case : SOT-223
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 75 m Ohms


Features:






Specifications






Description

The IRFL024NPbF has 7 features.The first one is Surface Mount.The second one is advanced process technology.The third one is ultra low on-resistance.The fourth one is Fast Switching.The fifth one is Fully Avalanche Rated.The sixth one is Lead-Free.The last one is dynamic dv/dt rating.

Fifth Generation HEXFETs from International Rectifier of the IRFL024NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

The SOT-223 package of the IRFL024NPbF is designed for surface-mount using vapor phase,infrared,or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

The IRFL024NPbF has some information about absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 4.0,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 2.8,the units is A.ID @ Tc =70 ,when parameter is continuous drain current,VGS @ 10V,the max is 2.3,the units is A.IDM,when parameter is pulsed drain current,the max is 11.2,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 2.1,the units is W.PD @ TA = 25,when parameter of the IRFL024NPbF is power dissipation,the max is 1.0,the units is W.When parameter is linear derating factor,the max is 8.3,the units is W/.VGS,when parameter is Gate-to-Source Voltage,the max is ±20,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 214,the units is mJ.IAR,when parameter is Avalanche Current,the max is 2.8,the units is A.EAR,when parameter is Repetitive Avalanche Energy,the max is 0.1,the units is mJ.dv/dt,when parameter is Peak Diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ and TSTG,when parameter is Operating Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.
     

Parameters:

Technical/Catalog Information	IRFL024NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	75 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	2.1W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	18.3nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFL024NPBF IRFL024NPBF