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IRFIZ34N

MOSFET N-CH 55V 21A TO220FP

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SeekIC No. : 004377158 Detail

IRFIZ34N: MOSFET N-CH 55V 21A TO220FP

IRFIZ34N Data Sheet

floor Price/Ceiling Price

US $ 3.36~3.36 / Piece | Get Latest Price
Part Number:
IRFIZ34N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~350
  • Unit Price
  • $3.36
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 21 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15
IDM Pulsed Drain Current 100
PD @TC = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 110 mJ
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 3.7 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs IRFIZ34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak IRFIZ34N eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.




Parameters:

Technical/Catalog InformationIRFIZ34N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs40 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max37W
PackagingBulk
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseTO-220-5 Fullpak (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFIZ34N
IRFIZ34N



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