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IRFN250SMD

Features: ·HERMETICALLY SEALED SURFACE MOUNT PACKAGE·SMALL FOOTPRINT - EFFICIENT USE O PCB SPACE.·SIMPLE DRIVE REQUIREMENTS·LIGHTWEIGHT·HIGH PACKING DENSITIESSpecifications VGS Gate - C Source Voltag ±20V ID Continuous Drain Current(VGS = 0 , Tcase = 25°C 22A ID Continuous Drain Cu...

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SeekIC No. : 004377215 Detail

IRFN250SMD: Features: ·HERMETICALLY SEALED SURFACE MOUNT PACKAGE·SMALL FOOTPRINT - EFFICIENT USE O PCB SPACE.·SIMPLE DRIVE REQUIREMENTS·LIGHTWEIGHT·HIGH PACKING DENSITIESSpecifications VGS Gate - C Source...

IRFN250SMD Data Sheet

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Part Number:
IRFN250SMD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·HERMETICALLY SEALED SURFACE MOUNT PACKAGE
·SMALL FOOTPRINT - EFFICIENT USE O PCB SPACE.
·SIMPLE DRIVE REQUIREMENTS
·LIGHTWEIGHT
·HIGH PACKING DENSITIES


Specifications

VGS Gate - C Source Voltag ±20V
ID Continuous Drain Current(VGS = 0 , Tcase = 25°C
 22A
ID Continuous Drain Current(VGS = 0 , Tcase = 100°C 88A
IDM
PulsedDrain Current 1		 100W
PD Power Dissipation @ Tcase = 25°C
Linear Derating Factor		 0.8W/°C
EAS
Single Pulse Avalanche Energy 2 		500mJ
dv/dt
Peak Diode Recovery 3		 5.0V/ns
TJ , Tstg Operating and Storage Temperature Range -55 to 150°C
TL Package Mounting Surface Temperature (for5 sec) 300°C
RJC Thermal Resistance Junction to Case 1.25°C/W
RJ-PCB Thermal Resistance Junction to PCB (Typical) 3°C/W
Notes
1)  Pulse Test: Pulse Width  300ms,  2%
2)  @ VDD= 50V , L  1.5mH , RG = 25 , Peak IL = 22A , Starting TJ= 25°C
3)  @ ISD 22A , di/dt  190A/s , VDD BVDSS , TJ 150°C , SUGGESTED  RG= 2.35
   


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