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IRFN214B

Features: 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF)Fast switching 100% avalanche tested Improved dv/dt capabilitySpecifications Parameter Symbol IRFN214B Units Drain-Source Voltage VDSS 250 V Drain C...

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SeekIC No. : 004377211 Detail

IRFN214B: Features: 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF)Fast switching 100% avalanche tested Improved dv/dt capabilitySpecifications ...

IRFN214B Data Sheet

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Part Number:
IRFN214B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V
Low gate charge ( typical 8.1 nC)
Low Crss ( typical  7.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability


Specifications

Parameter
Symbol
IRFN214B
Units
Drain-Source Voltage
VDSS
250
V
Drain Current - Continuous (TA = 25°C)
- Continuous (TA = 70°C)
ID
0.6
A
0.4
A
Drain Current - Pulsed (Note 1)
IDM
2.4
A
Gate-Source VoltagE
VGSS
+30
V
Single Pulsed Avalanche Energy (Note 2)
EAS
45
mJ
Avalanche Current (Note 1)
IAR
0.8
A
Repetitive Avalanche Energy (Note 1)
EAR
0.18
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.8
V/ns
Power Dissipation (TL = 25°C)
- Derate above 25°C
PD
1.8
W
0.01
W/°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Maximum lead temperature for soldering purpos
1/8" from case for 5 seconds
TL
300
°C



Description

These N-Channel  enhancement  mode  power  field  effecransistors IRFN214B are  produced  using  Fairchild's  proprietary
planar, DMOS technology.

This advanced technology IRFN214B has been especially tailored t minimize  on-state  resistance,  provide  superior  switchin
performance,  and  withstand  high  energy  pulse  in  th avalanche and commutation mode. These devices are we uited for electronic lamp ballast.




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