Position: Home  > All Categories> Integrated Circuits (ICs) > IRFN350

IRFN350

Features: ·Avalanche Energy Rating·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light-weightSpecifications Parameter IRFN350 Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 14 A ID @ VGS = 10V, TC ...

product image

IRFN350 Picture
See larger image
SeekIC No. : 004377218 Detail

IRFN350: Features: ·Avalanche Energy Rating·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light-weightSpecifications Parameter IRFN350 ...

IRFN350 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFN350
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/2

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Avalanche Energy Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light-weight


Specifications

 

Parameter

IRFN350

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

14

A

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

9

IDM

Pulsed Drain Current

56

PD @ TC = 25°C

Max. Power Dissipation

150

W

 

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

700

mJ

IAR

Avalanche Current

14

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150

oC

 

Package Mounting Surface Temperature

300 (for 5 seconds)

 

Weight

2.6 (typical)

9




Description

400 Volt, 0.315W HEXFET

    HEXFET technology IRFN350 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient
geometry achieves very low on-state resistance combined with high transconductance.
   
    HEXFET transistors IRFN350 also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, nverters, choppers, audio amplifiers, and high energy pulse circuits.

    The Surface Mount Device (SMD-1) IRFN350 package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Memory Cards, Modules
WT32
VTL5C7
Isolators
HCPL062N
HCPL316J
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more