IRFK3D450

The IRFK3D450 is has four points of features: (1)high current capability; (2)UL recognised E78996; (3)electrically isolated base plate; (4)easy assembly into equipment. The HEX-pak utilises the well-proven HEXFET die, combining low on-state resistance with high transconductance. These superior technology die of the IRFK3D450 are assembled by state of the art techniques into the TO-240 package, featuring 2.5 kV rms isolation and soild M5 screw connections.

The absolute maximum ratings of the IRFK3D450 can be summarized as:(1)continuous drain current (Tc=25):125 A;(2)continuous drain current (Tc=100 ):55 A;(3)pulse drain current:435 A;(4)maximum power dissipation:625 W;(5)gate-to-source voltage:20 V;(6)R.M.S. isolation voltage, circuit to base:2.5 kV;(7)operating junction temperature range:-40 to +50;(8)storage temperature range:-40 to +150. If you want to know more information such as the electrical characteristics about the IRFK3D450, please download the datasheet in www.seekic.com or www.chinaicmart.com .