DescriptionThe IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-240 package which is suited to power applications where space is a premium. IRFK2D450 is for fast swi...
IRFK2D450: DescriptionThe IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-2...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-240 package which is suited to power applications where space is a premium. IRFK2D450 is for fast switching.
There are some features of the IRFK2D450 as follows. First is high current capability. Then is UL recognized E78996. Then is electrically isolated base plate. The last one is easy assembly into equipment.
What comes next is about the absolute maximum ratings of the IRFK2D450. The ID @ TC=25 (continuous drain current) is 22 A. The ID @ TC=100 (continuous drain current) is 14 A. The IDM (pulse drain current) is 88 A. The PD @ TC=25 (maximum power dissipation) is 500 W. The VGS (gate-source voltage) is 20 V. The VINS (R.M.S isolation voltage, circuit to base) is 2.5 kV. The TJ (operating junction temperature) is from -40 to 150. The TSTG (storage temperature) is from -40 to 150. The maximum RthJC (thermal resistance, junction to case) is 0.25 K/W. The typical RthCS (thermal resistance, case to sink) is 0.1 K/W.