IRFK2D450

DescriptionThe IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-240 package which is suited to power applications where space is a premium. IRFK2D450 is for fast swi...

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SeekIC No. : 004377166 Detail

IRFK2D450: DescriptionThe IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-2...

floor Price/Ceiling Price

Part Number:
IRFK2D450
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/1

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Product Details

Description



Description

The IRFK2D450 is a kind of isolated base power HEX-pak assembly. The HEX-pak uses the HEXFET die which combines low on-state resistance with high transconductance. It is available in TO-240 package which is suited to power applications where space is a premium. IRFK2D450 is for fast switching.

There are some features of the IRFK2D450 as follows. First is high current capability. Then is UL recognized E78996. Then is electrically isolated base plate. The last one is easy assembly into equipment.

What comes next is about the absolute maximum ratings of the IRFK2D450. The ID @ TC=25 (continuous drain current) is 22 A. The ID @ TC=100 (continuous drain current) is 14 A. The IDM (pulse drain current) is 88 A. The PD @ TC=25 (maximum power dissipation) is 500 W. The VGS (gate-source voltage) is 20 V. The VINS (R.M.S isolation voltage, circuit to base) is 2.5 kV. The TJ (operating junction temperature) is from -40 to 150. The TSTG (storage temperature) is from -40 to 150. The maximum RthJC (thermal resistance, junction to case) is 0.25 K/W. The typical RthCS (thermal resistance, case to sink) is 0.1 K/W.




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